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A novel hot-hole injection degradation model for lateral nDMOS transistors

dc.contributor.authorMoens, P.
dc.contributor.authorTack, Marnix
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T17:21:50Z
dc.date.available2021-10-14T17:21:50Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5486
dc.sourceIIOimport
dc.titleA novel hot-hole injection degradation model for lateral nDMOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage877
dc.source.endpage880
dc.source.conferenceIEDM Technical Digest; December 2001; Washington, D.C.
dc.source.conferencelocation
imec.availabilityPublished - imec


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