Show simple item record

Impact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing

dc.contributor.authorMöller, T.
dc.contributor.authorObermeier, G.
dc.contributor.authorBearda, Twan
dc.contributor.authorHuber, A.
dc.contributor.authorSchmolke, R.
dc.contributor.authorvon Ammon, W.
dc.contributor.authorLerch, W.
dc.date.accessioned2021-10-14T17:23:54Z
dc.date.available2021-10-14T17:23:54Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5500
dc.sourceIIOimport
dc.titleImpact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage127
dc.source.endpage132
dc.source.conferenceGADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocation
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record