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Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices

dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T17:26:08Z
dc.date.available2021-10-14T17:26:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5514
dc.sourceIIOimport
dc.titleExtraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage90
dc.source.conferenceSilicon-on-Insulator Technology and Devices X. Proceedings of the 10th Symposium
dc.source.conferencelocation
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2001-3


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