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A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices

dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-10-14T17:26:17Z
dc.date.available2021-10-14T17:26:17Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5515
dc.sourceIIOimport
dc.titleA new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage23
dc.source.endpage27
dc.source.conferenceXVI SBMicro. International Conference on Microelectronics and Packaging
dc.source.conferencedate10/09/2001
dc.source.conferencelocationPirenopolis Brazil
imec.availabilityPublished - imec


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