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A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
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A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
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Date
2001
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nicolett, A. S.
;
Martino, Joao Antonio
;
Simoen, Eddy
;
Claeys, C.
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1919
since deposited on 2021-10-14
Acq. date: 2025-12-10
Citations
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Views
1919
since deposited on 2021-10-14
Acq. date: 2025-12-10
Citations