A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices

dc.contributor.author	Nicolett, A. S.
dc.contributor.author	Martino, Joao Antonio
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, C.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-14T17:26:17Z
dc.date.available	2021-10-14T17:26:17Z
dc.date.issued	2001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/5515
dc.source.beginpage	23
dc.source.conference	XVI SBMicro. International Conference on Microelectronics and Packaging
dc.source.conferencedate	10/09/2001
dc.source.conferencelocation	Pirenopolis Brazil
dc.source.endpage	27
dc.title	A new technique to extract the oxide charge density at front and back interfaces of SOI NMOSFETs devices
dc.type	Proceedings paper
dspace.entity.type	Publication
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