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Impact of channel engineering technology on HC performance of 100 nm MOSFETs

dc.contributor.authorOkhonin, S.
dc.contributor.authorFazan, P.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorHenson, Kirklen
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorPonomarev, Youri
dc.date.accessioned2021-10-14T17:29:50Z
dc.date.available2021-10-14T17:29:50Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5537
dc.sourceIIOimport
dc.titleImpact of channel engineering technology on HC performance of 100 nm MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage283
dc.source.endpage286
dc.source.conferenceProceedings of the 31st European Solid-State Device Research Conference
dc.source.conferencedate11/09/2001
dc.source.conferencelocationNuremberg Germany
imec.availabilityPublished - imec


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