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Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si

dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-14T17:53:15Z
dc.date.available2021-10-14T17:53:15Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5675
dc.sourceIIOimport
dc.titleElectron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si
dc.typeOral presentation
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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