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Electron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2

dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-14T17:53:25Z
dc.date.available2021-10-14T17:53:25Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5676
dc.sourceIIOimport
dc.titleElectron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2
dc.typeOral presentation
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.conference31st IEEE Semiconductor Interface Specialists Conference; 7-9 December 2001; San Diego, CA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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