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Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

dc.contributor.authorTsai, Wilman
dc.contributor.authorNohira, Hiroshi
dc.contributor.authorCarter, Richard
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorPétry, Jasmine
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorYoung, Edward
dc.contributor.authorZhao, Chao
dc.contributor.authorMaes, Jos
dc.contributor.authorTuominen, Marko
dc.date.accessioned2021-10-14T18:00:40Z
dc.date.available2021-10-14T18:00:40Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5715
dc.sourceIIOimport
dc.titleInterfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.conferenceIUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on
dc.source.conferencelocation
imec.availabilityPublished - imec


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