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(Sub-) 100-nm gate patterning using 248-nm alternating PSM

dc.contributor.authorVandenberghe, Geert
dc.contributor.authorJaenen, Patrick
dc.contributor.authorJonckheere, Rik
dc.contributor.authorRonse, Kurt
dc.contributor.authorToublan, O.
dc.date.accessioned2021-10-14T18:10:07Z
dc.date.available2021-10-14T18:10:07Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5766
dc.sourceIIOimport
dc.title(Sub-) 100-nm gate patterning using 248-nm alternating PSM
dc.typeProceedings paper
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorJaenen, Patrick
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage61
dc.source.endpage70
dc.source.conferencePhotomask and Next-Generation Lithography Mask Technology VIII
dc.source.conferencedate25/04/2001
dc.source.conferencelocationYokohama Japan
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 4409


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