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Analysis and improved compact modelling of the breakdown behaviour of sub-0.25 micron ESD protection ggNMOS devices

dc.contributor.authorVassilev, Vesselin
dc.contributor.authorLorenzini, Martino
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorSteyaert, Michel
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-14T18:17:25Z
dc.date.available2021-10-14T18:17:25Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5803
dc.sourceIIOimport
dc.titleAnalysis and improved compact modelling of the breakdown behaviour of sub-0.25 micron ESD protection ggNMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage461
dc.source.endpage468
dc.source.conferenceElectrical Overstress/Electrostratic Discharge Syymposium Proceedings - EOS/ESD
dc.source.conferencedate11/09/2001
dc.source.conferencelocationPortland, OR USA
imec.availabilityPublished - imec


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