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Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks

dc.contributor.authorZhao, Chao
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorHoussa, Michel
dc.contributor.authorCarter, Richard
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorYoung, Edward
dc.contributor.authorTsai, Wilman
dc.contributor.authorRoebben, G.
dc.contributor.authorVan der Biest, O.
dc.contributor.authorHaukka, S.
dc.date.accessioned2021-10-14T18:32:33Z
dc.date.available2021-10-14T18:32:33Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5876
dc.sourceIIOimport
dc.titleCrystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
dc.typeOral presentation
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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