Performance Enhancement of THz Detector Based on Trantenna with Shallow Trench Isolation in 28-nm CMOS Technology

Abstract

We report a high-performance plasmonic terahertz (THz) detector based on a monolithic transistor-antenna (Trantenna) structure by using the 28-nm CMOS foundry technology. By designing an ultimate asymmetric field-effect transistor (FET) on a confined channel structure with shallow trench isolation (STI) technology, enhanced channel charge asymmetry between the source and drain has been obtained compared to the non-confined channel structure with limitations of asymmetric boundary condition intensification. In addition, we experimentally demonstrate a 2.25-fold performance enhancement over the non-confined channel plasmonic THz detector at 0.1 THz.