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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

dc.contributor.authorAlam, M.A.
dc.contributor.authorGreen, Martin
dc.contributor.authorHo, M.Y.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorRäisänen, P.I.
dc.date.accessioned2021-10-14T21:06:59Z
dc.date.available2021-10-14T21:06:59Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5940
dc.sourceIIOimport
dc.titleA mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS
dc.source.conferencedate2/12/2002
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec


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