Browsing Presentations by imec author "a06c05f120dc9846f2273329c61c503e9b572f30"

Band alignment between (100)Si and complex rare-earth/transition metal oxides

Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Heeg,; Schubert,; Jia, Y.; Schlom, D.; Lucovsky, G. (2004)

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2004)

Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO

Afanasiev, Valeri; Shamuilia, Sheron; dimoulas, A.; Stesmans, Andre; Houssa, Michel (2005)

Electronic properties and conduction defects from first principles in doped GexSe1-x materials for selector applications

Clima, Sergiu; Opsomer, Karl; Devulder, Wouter; Goux, Ludovic; Afanasiev, Valeri; Kar, Gouri Sankar; Pourtois, Geoffrey (2018)

Influence of Ge3N4 interlayers on the Schottky barrier heigh of metal contacts on n-type germanium

Lieten, Ruben; Afanasiev, Valeri; Hoang, Thoan Nguyen; Degroote, Stefan; Borghs, Gustaaf (2009)

Material-selective doping of 2D TMDC through AlxOy encapsulation

Leonhardt, Alessandra; Chiappe, Daniele; El Kazzi, Salim; Afanasiev, Valeri; Conard, Thierry; Franquet, Alexis; Huyghebaert, Cedric; De Gendt, Stefan (2019)

Ru-based hybrid floating gate for NAND memory applications

Lisoni, Judit; Breuil, Laurent; Blomme, Pieter; Kolomiiets, N.; Afanasiev, Valeri; Van den Bosch, Geert; Van Houdt, Jan; De Stefano, F. (2015)

Schottky barrier height of metal contacts on n-type germanium with and without Ge3N4 interlayers

Lieten, Ruben; Afanasiev, Valeri; Thoan, Nguyen Hoang; Degroote, Stefan; Borghs, Gustaaf (2010)