Browsing Presentations by imec author "c51910f96307207d647c473ae9f979b7392713e4"
Now showing items 1-19 of 19
-
Abrupt Ge-Si and GeSn-Si interfaces by solid phase crystallization
Lieten, Ruben; Su, Chen-Yi; Locquet, Jean-Pierre (2012) -
Crystalline Ge3N4 on Ge(111)
Lieten, Ruben; Degroote, Stefan; Leys, Maarten; Kuijk, Maarten; Borghs, Gustaaf (2008) -
Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy
Zhang, Liyang; Cheng, Kai; Liang, Hu; Lieten, Ruben; Latkowska, Magdalena; Baranowski, Michal; Kudrawiec, Robert; Misiewicz, Jan; Dekoster, Johan; Borghs, Gustaaf (2012) -
GaN epitaxy on off-axis Ge(111) substrates by molecular beam epitaxy
Lieten, Ruben; Zhang, Yucheng; Degroote, Stefan; Kuijk, Maarten; Borghs, Gustaaf (2007) -
Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer
Lieten, Ruben; Degroote, Stefan; Kuijk, Maarten; Borghs, Gustaaf (2007) -
H2 generation by solar water splitting using nanostructured GaN electrode
Tseng, Peter; Lieten, Ruben; Vereecken, Philippe; Borghs, Gustaaf (2012) -
Implantation and activation of phosphorus in amorphous and crystalline Ge on Si
Lieten, Ruben; Beeman, Jeff W.; Simoen, Eddy; Haller, Eugene E.; Dekoster, Johan; Locquet, Jean-Pierre (2012) -
Influence of Ge3N4 interlayers on the Schottky barrier heigh of metal contacts on n-type germanium
Lieten, Ruben; Afanasiev, Valeri; Hoang, Thoan Nguyen; Degroote, Stefan; Borghs, Gustaaf (2009) -
Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy
Lieten, Ruben; Motsnyi, Vasyl; Zhang, Liyang; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2010) -
Mg doped p-type GaN layers on Si templates by molecular beam epitaxy
Lieten, Ruben; Motsnyi, Vasyl; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2009) -
Photoluminescence of bulk germanium
Lieten, Ruben; Bustillo, Karen; Smets, Tomas; Simoen, Eddy; Ager, Joel W.; Haller, Eugene E.; Locquet, Jean-Pierre (2012) -
Schottky barrier height of metal contacts on n-type germanium with and without Ge3N4 interlayers
Lieten, Ruben; Afanasiev, Valeri; Thoan, Nguyen Hoang; Degroote, Stefan; Borghs, Gustaaf (2010) -
Size-dependent strain relaxation in GaN nanopillars
Tseng, Peter; Gonzalez, Mario; Sijmus, Bram; Lieten, Ruben; Cheng, Kai; Borghs, Gustaaf (2011) -
Solid phase epitaxy of germanium compounds
Lieten, Ruben (2012) -
Structural features in GaN grown on a Ge-(111) substrate
Zhang, Yucheng; McAleese, C.; Xiu, H.; Humphreys, C.; Lieten, Ruben; Degroote, Stefan; Borghs, Gustaaf (2007) -
Suppression of domain formation in GaN layers grown on Ge(111)
Lieten, Ruben; Degroote, Stefan; Leys, Maarten; Kuijk, Maarten; Borghs, Gustaaf (2008) -
Suppression of twin defects in single crystalline GeSn compounds on silicon by solid phase crystallization
Lieten, Ruben; Seo, Jin Won; Jevasuwan, Wipakorn; Hattori, Hirayuki; Uchida, Noriyuki; Miura, Shu; Tanaka, Masatoshi; Locquet, Jean-Pierre; Maeda, Tatsuro (2014) -
Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices
Lieten, Ruben; Jevasuwan, Wipakorn; Uchida, Nori; Hattori, H.; Seo, Jin Won; Locquet, Jean-Pierre; Maeda, Tatsuro (2013) -
Thermally induced pit formation and Sn diffusion in strained GeSn films
Fleischmann, Claudia; Lieten, Ruben; Hoenicke, Philipp; Seidel, Felix; Zaima, Shimura; Conard, Thierry; Temst, Kristiaan; Vandervorst, Wilfried; Vantomme, Andre (2014)