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Characterization of TiN films deposited by atomic layer deposition

dc.contributor.authorBesling, W.F.A.
dc.contributor.authorSatta, Alessandra
dc.contributor.authorSchuhmacher, Jörg
dc.contributor.authorBeyer, Gerald
dc.contributor.authorMaex, Karen
dc.contributor.authorKilpela, Olli
dc.contributor.authorSprey, Hessel
dc.date.accessioned2021-10-14T21:08:38Z
dc.date.available2021-10-14T21:08:38Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6006
dc.sourceIIOimport
dc.titleCharacterization of TiN films deposited by atomic layer deposition
dc.typeProceedings paper
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorSprey, Hessel
dc.source.peerreviewno
dc.source.beginpage56
dc.source.endpage58
dc.source.conferenceProceedings of the 3rd AVS International Conference on Microelectronics and Interfaces
dc.source.conferencedate11/02/2002
dc.source.conferencelocationSanta Clara, CA USA
imec.availabilityPublished - imec


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