On the Channel and Wafer Orientation Dependence in Unstrained and Strained <i>p</i>-Type Nanosheets

Abstract

The performance dependence on wafer and channel orientation in nanosheet pFETs with a sheet width of WNS=12nm and a sheet thickness of tNS=5 nm is investigated by Monte Carlo (MC) device simulation. It is shown that (a) the influence of the sidewall changes the orientation dependence of the longchannel mobility in planar bulk pMOSFETs and (b) that this orientation dependence further changes in short-channel devices with (110)/⟨100⟩ having the hightest on-current in the absence of stress. The strongest performance is obtained for uniaxial compressive stress in ⟨111⟩ channel direction, while high uniaxial tensile stress in ⟨100⟩ direction enables only a modest gain.