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Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices

dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T21:15:45Z
dc.date.available2021-10-14T21:15:45Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6126
dc.sourceIIOimport
dc.titleInfluence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage263
dc.source.endpage266
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - open access


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