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Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices
Publication:
Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices
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Date
2002
Proceedings Paper
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6311.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Collaert, Nadine
;
Verheyen, Peter
;
De Meyer, Kristin
;
Loo, Roger
;
Caymax, Matty
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Abstract
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1802
since deposited on 2021-10-14
Acq. date: 2025-12-18
Citations
Metrics
Views
1802
since deposited on 2021-10-14
Acq. date: 2025-12-18
Citations