Publication:

Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices

Date

2002
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-14T21:15:45Z
dc.date.available2021-10-14T21:15:45Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6126
dc.source.beginpage263
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
dc.source.endpage266
dc.title

Influence of the Ge-concentration and RTA on the device performance of strained Si/SiGe pMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
6311.pdf
Size:
308.41 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions