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Engineering of the polysilicon emitter interfacial layer using low temperature thermal re-oxidation in an LPCVD cluster tool

dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCuthbertson, Alan
dc.contributor.authorWilhelm, Rudi
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-09-29T13:05:29Z
dc.date.available2021-09-29T13:05:29Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/612
dc.sourceIIOimport
dc.titleEngineering of the polysilicon emitter interfacial layer using low temperature thermal re-oxidation in an LPCVD cluster tool
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage429
dc.source.endpage432
dc.source.conference25th European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate25/09/1995
dc.source.conferencelocationDen Haag The Netherlands
imec.availabilityPublished - open access


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