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Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials

dc.contributor.authorJacob, A. P.
dc.contributor.authorMyrberg, T.
dc.contributor.authorYousif, M. Y. A.
dc.contributor.authorNur, O.
dc.contributor.authorWillander, M.
dc.contributor.authorLundgren, P.
dc.contributor.authorSveinbjörnson, E. Ö.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T21:53:06Z
dc.date.available2021-10-14T21:53:06Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6425
dc.sourceIIOimport
dc.titleLow temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.beginpage1088
dc.source.endpage1095
dc.source.conferenceXI International Workshop on Physics of Semiconductor Devices - IWPSD
dc.source.conferencedate11/12/2001
dc.source.conferencelocationNew Delhi India
imec.availabilityPublished - imec
imec.internalnotesVol. 2


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