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Doping of oxidized float zone silicon by thermal donors- a low thermal budget doping method for device applications?

dc.contributor.authorJob, R.
dc.contributor.authorUlyashin, A.G.
dc.contributor.authorHuang, Y.L.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNiedernostheide, F.-J.
dc.contributor.authorSchulze, H.-J.
dc.contributor.authorTonelli, G.
dc.date.accessioned2021-10-14T21:56:02Z
dc.date.available2021-10-14T21:56:02Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6443
dc.sourceIIOimport
dc.titleDoping of oxidized float zone silicon by thermal donors- a low thermal budget doping method for device applications?
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageF9.5
dc.source.conferenceDefect- and Impurity-Engineered Semiconductors and Devices III
dc.source.conferencedate1/04/2002
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Proceedings; Vol.719


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