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Elevated co-silicide for sub-100nm high performance and RF CMOS

dc.contributor.authorJurczak, Gosia
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorRooyackers, Rita
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGrau, Lluis
dc.contributor.authorLauwers, Anne
dc.contributor.authorLindsay, Richard
dc.contributor.authorPeytier, Ivan
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorBadenes, Gonçal
dc.date.accessioned2021-10-14T21:58:17Z
dc.date.available2021-10-14T21:58:17Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6457
dc.sourceIIOimport
dc.titleElevated co-silicide for sub-100nm high performance and RF CMOS
dc.typeProceedings paper
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorLauwers, Anne
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage311
dc.source.endpage314
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - open access


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