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Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing

dc.contributor.authorLucci, Luca
dc.contributor.authorPantisano, Luigi
dc.contributor.authorCartier, Eduard
dc.contributor.authorKerber, Andreas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHo, M.Y.
dc.contributor.authorGreen, Martin
dc.contributor.authorSelmi, L.
dc.date.accessioned2021-10-14T22:15:48Z
dc.date.available2021-10-14T22:15:48Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6558
dc.sourceIIOimport
dc.titlePolarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.conference33rd IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate5/12/2002
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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