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Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's
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Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's
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Date
1994
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Carpi, Enio
;
Van Hove, Marleen
;
Van Rossum, Marc
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33313
since deposited on 2021-09-29
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last month
Acq. date: 2026-09-15
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Statistics
Views
33313
since deposited on 2021-09-29
1
last month
Acq. date: 2026-09-15
Citations