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Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's
Publication:
Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's
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Date
1994
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Carpi, Enio
;
Van Hove, Marleen
;
Van Rossum, Marc
Journal
Abstract
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33312
since deposited on 2021-09-29
4
last month
Acq. date: 2025-12-12
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Metrics
Views
33312
since deposited on 2021-09-29
4
last month
Acq. date: 2025-12-12
Citations