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AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments

dc.contributor.authorMistele, D.
dc.contributor.authorRotter, T.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorRöver, K.S.
dc.contributor.authorSeyboth, M.
dc.contributor.authorSchwegler, V.
dc.contributor.authorStemmer, J.
dc.contributor.authorFedler, F.
dc.contributor.authorKlausing, H.
dc.contributor.authorSemchinova, O.K.
dc.contributor.authorAderhold, J.
dc.contributor.authorGraul, J.
dc.date.accessioned2021-10-14T22:26:00Z
dc.date.available2021-10-14T22:26:00Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6612
dc.sourceIIOimport
dc.titleAlGaN/GaN based MOSHFETs with different gate dielectrics and treatments
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpageI6.51
dc.source.conferenceGaN and Related Alloys 2001
dc.source.conferencedate26/11/2002
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 693


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