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The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures

dc.contributor.authorNicolett, A.S.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T22:32:30Z
dc.date.available2021-10-14T22:32:30Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6645
dc.sourceIIOimport
dc.titleThe influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage28
dc.source.endpage34
dc.source.conferenceProceedings of the 17th International Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate9/09/2002
dc.source.conferencelocationPorto Allegre Brazil
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-8


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