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Radiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiation

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorHirao, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNakabayashi, M.
dc.contributor.authorOnoda, S.
dc.date.accessioned2021-10-14T22:36:42Z
dc.date.available2021-10-14T22:36:42Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6666
dc.sourceIIOimport
dc.titleRadiation damage in npn Si transistors due to high-temperature gamma-ray and 1-MeV electron irradiation
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage465
dc.source.endpage470
dc.source.conferenceGADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocationS. Tecla Italy
imec.availabilityPublished - imec
imec.internalnotesSoli State Phenomena; Vol. 82-84


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