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Characterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technology

dc.contributor.authorHabas, Predrag
dc.contributor.authorBellens, Rudi
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan den bosch, G.
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-09-29T13:07:04Z
dc.date.available2021-09-29T13:07:04Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/668
dc.sourceIIOimport
dc.titleCharacterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technology
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage197
dc.source.endpage202
dc.source.conference20th International Conference on Microelectronics. Proceedings
dc.source.conferencedate12/09/1995
dc.source.conferencelocationNis Serbia
imec.availabilityPublished - imec


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