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Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's

dc.contributor.authorCarpi, Enio
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T12:40:00Z
dc.date.available2021-09-29T12:40:00Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/66
dc.sourceIIOimport
dc.titleOptimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conference2nd International Workshop on High-Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO); November 1
imec.availabilityPublished - imec


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