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Nucleation and growth of TiN films deposited by atomic layer deposition

dc.contributor.authorSatta, Alessandra
dc.contributor.authorBrongersma, Sywert
dc.contributor.authorSchuhmacher, Jörg
dc.contributor.authorConard, Thierry
dc.contributor.authorBeyer, Gerald
dc.contributor.authorMaex, Karen
dc.contributor.authorViitanen, M.M.
dc.contributor.authorBrongersma, H.H.
dc.contributor.authorBesling, W.
dc.contributor.authorKilpela, Olli
dc.contributor.authorSprey, Hessel
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-14T23:02:21Z
dc.date.available2021-10-14T23:02:21Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6790
dc.sourceIIOimport
dc.titleNucleation and growth of TiN films deposited by atomic layer deposition
dc.typeProceedings paper
dc.contributor.imecauthorBrongersma, Sywert
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorSprey, Hessel
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecBrongersma, Sywert::0000-0002-1755-3897
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage52
dc.source.endpage54
dc.source.conferenceProceedings of the 3rd AVS International Conference on Microelectronics and Interfaces
dc.source.conferencedate11/02/2002
dc.source.conferencelocationSanta Clara, CA USA
imec.availabilityPublished - imec


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