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Laser annealing for ultra-shallow junction formation in advanced CMOS

dc.contributor.authorSurdeanu, Radu
dc.contributor.authorPonomarev, Youri
dc.contributor.authorCerutti, R.
dc.contributor.authorPawlak, Bartek
dc.contributor.authorNanver, L.K.
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorStolk, Peter
dc.contributor.authorDachs, Charles
dc.contributor.authorVerheijen, M.A.
dc.contributor.authorKaiser, M.
dc.contributor.authorHopstaken, M.J.P.
dc.contributor.authorvan Berkum, J.G.M.
dc.contributor.authorRoozeboom, F.
dc.contributor.authorLindsay, Richard
dc.date.accessioned2021-10-14T23:17:54Z
dc.date.available2021-10-14T23:17:54Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6862
dc.sourceIIOimport
dc.titleLaser annealing for ultra-shallow junction formation in advanced CMOS
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorHoflijk, Ilse
dc.source.peerreviewno
dc.source.beginpage413
dc.source.endpage426
dc.source.conferenceRapid Thermal And Other Short-Time Processing Technologies III
dc.source.conferencedate12/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2002-11


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