Show simple item record

The mechanism of mobility degradation in misfets with Al2O3 gate dielectric

dc.contributor.authorTorii, K.
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorSaito, S.
dc.contributor.authorTonomura, O.
dc.contributor.authorHiratani, M.
dc.contributor.authorManabe, Yukiko
dc.contributor.authorCaymax, Matty
dc.contributor.authorMaes, Jan
dc.date.accessioned2021-10-14T23:23:18Z
dc.date.available2021-10-14T23:23:18Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6887
dc.sourceIIOimport
dc.titleThe mechanism of mobility degradation in misfets with Al2O3 gate dielectric
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaes, Jan
dc.source.peerreviewno
dc.source.beginpage188
dc.source.endpage189
dc.source.conferenceSymposium on VLSI Technology: Digest of Technical Papers
dc.source.conferencedate11/06/2002
dc.source.conferencelocationHonolulu, HI USa
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record