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Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition

dc.contributor.authorTsai, Wilman
dc.contributor.authorChen, Jian
dc.contributor.authorCarter, Richard
dc.contributor.authorCartier, Eduard
dc.contributor.authorKluth, Jon
dc.contributor.authorRichard, Olivier
dc.contributor.authorClaes, Martine
dc.contributor.authorLin, Steven
dc.contributor.authorNohira, Hiroshi
dc.contributor.authorConard, Thierry
dc.contributor.authorCaymax, Matty
dc.contributor.authorYoung, Edward
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorManabe, Yukiko
dc.contributor.authorMaes, Jan
dc.contributor.authorRittersma, Chris
dc.contributor.authorBesling, Wim
dc.contributor.authorRoozeboom, F.
dc.date.accessioned2021-10-14T23:24:59Z
dc.date.available2021-10-14T23:24:59Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6894
dc.sourceIIOimport
dc.titleIntegration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
dc.typeProceedings paper
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMaes, Jan
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage747
dc.source.endpage760
dc.source.conferenceSemiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate12/05/2002
dc.source.conferencelocationPhildelphia, PA USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2002-2


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