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High depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si

dc.contributor.authorvan den Berg, J.A.
dc.contributor.authorArmour, D.G.
dc.contributor.authorWerner, M.
dc.contributor.authorWhelan, S.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorCollart, E.H.J.
dc.contributor.authorGoldberg, R.D.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.C.Q.
dc.date.accessioned2021-10-14T23:30:17Z
dc.date.available2021-10-14T23:30:17Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6918
dc.sourceIIOimport
dc.titleHigh depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage597
dc.source.endpage600
dc.source.conferenceProceedings 14th International Conference on Ion Implantation Technology Conference
dc.source.conferencedate22/09/2002
dc.source.conferencelocationTaos, NM USA
imec.availabilityPublished - imec


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