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IR and MW absorption techniques for bulk and surface recombination control in high-quality silicon

dc.contributor.authorKaniava, Arvydas
dc.contributor.authorMenczigar, U.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorRotondaro, Antonio
dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorVaitkus, J.
dc.contributor.authorKöster, L.
dc.contributor.authorGräf, D.
dc.date.accessioned2021-09-29T13:08:12Z
dc.date.available2021-09-29T13:08:12Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/699
dc.sourceIIOimport
dc.titleIR and MW absorption techniques for bulk and surface recombination control in high-quality silicon
dc.typeProceedings paper
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage389
dc.source.endpage394
dc.source.conferenceUltraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation
dc.source.conferencedate17/04/1995
dc.source.conferencelocationSan francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 386


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