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RPN oxynitride gate dielectrics for 90nm low power CMOS applications

dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.contributor.authorCubaynes, Florence
dc.contributor.authorRooyackers, Rita
dc.contributor.authorMertens, Sofie
dc.contributor.authorRothschild, Aude
dc.contributor.authorSchaekers, Marc
dc.contributor.authorAl-Shareef, H.
dc.contributor.authorMurto, R.
dc.contributor.authorDachs, Charles
dc.contributor.authorBadenes, Gonçal
dc.date.accessioned2021-10-14T23:50:58Z
dc.date.available2021-10-14T23:50:58Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7009
dc.sourceIIOimport
dc.titleRPN oxynitride gate dielectrics for 90nm low power CMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage159
dc.source.endpage162
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
imec.availabilityPublished - open access


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