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Analysis of the impact of reticle CD variations on the available process windows for a 100nm CMOS process

dc.contributor.authorVerhaegen, Staf
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorJonckheere, Rik
dc.contributor.authorRonse, Kurt
dc.date.accessioned2021-10-14T23:52:24Z
dc.date.available2021-10-14T23:52:24Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7015
dc.sourceIIOimport
dc.titleAnalysis of the impact of reticle CD variations on the available process windows for a 100nm CMOS process
dc.typeProceedings paper
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.source.peerreviewno
dc.source.beginpage197
dc.source.endpage208
dc.source.conference22nd Annual BACUS Symposium on Photomask Technology
dc.source.conferencedate3/10/2002
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 4889


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