On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devices
dc.contributor.author | Westlinder, J. | |
dc.contributor.author | Schram, T. | |
dc.contributor.author | Pantisano, Luigi | |
dc.contributor.author | Cartier, Eduard | |
dc.contributor.author | Kerber, Andreas | |
dc.contributor.author | Lujan, Guilherme | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-15T00:00:54Z | |
dc.date.available | 2021-10-15T00:00:54Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7051 | |
dc.source | IIOimport | |
dc.title | On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devices | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.source.peerreview | no | |
dc.source.conference | 33rd IEEE Semiconductor Interface Specialists Conference - SISC | |
dc.source.conferencedate | 5/12/2002 | |
dc.source.conferencelocation | San Diego, CA USA | |
imec.availability | Published - imec |
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