Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing
dc.contributor.author | Wilk, G. D. | |
dc.contributor.author | Green, Martin | |
dc.contributor.author | M.-Y., Ho | |
dc.contributor.author | Busch, B. W. | |
dc.contributor.author | Sorsch, T. W. | |
dc.contributor.author | Klemens, F. P. | |
dc.contributor.author | Brijs, Bert | |
dc.contributor.author | van Dover, R. B. | |
dc.contributor.author | Kornblit, A. | |
dc.contributor.author | Gustafsson, T. | |
dc.contributor.author | Garfunkel, E. | |
dc.contributor.author | Hillenius, S. | |
dc.contributor.author | Monroe, D. | |
dc.contributor.author | Kalavade, P. | |
dc.contributor.author | Hergenrother, J. M. | |
dc.date.accessioned | 2021-10-15T00:01:42Z | |
dc.date.available | 2021-10-15T00:01:42Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7054 | |
dc.source | IIOimport | |
dc.title | Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing | |
dc.type | Proceedings paper | |
dc.source.peerreview | no | |
dc.source.beginpage | 88 | |
dc.source.endpage | 9 | |
dc.source.conference | Symposium on VLSI Technology: Digest of Technical Papers | |
dc.source.conferencedate | 11/06/2002 | |
dc.source.conferencelocation | Honolulu, HI USA | |
imec.availability | Published - imec |
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