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Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing
Publication:
Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing
Date
2002
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wilk, G. D.
;
Green, Martin
;
M.-Y., Ho
;
Busch, B. W.
;
Sorsch, T. W.
;
Klemens, F. P.
;
Brijs, Bert
;
van Dover, R. B.
;
Kornblit, A.
;
Gustafsson, T.
;
Garfunkel, E.
;
Hillenius, S.
;
Monroe, D.
;
Kalavade, P.
;
Hergenrother, J. M.
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2091
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
2091
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations