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Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing

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dc.contributor.authorWilk, G. D.
dc.contributor.authorGreen, Martin
dc.contributor.authorM.-Y., Ho
dc.contributor.authorBusch, B. W.
dc.contributor.authorSorsch, T. W.
dc.contributor.authorKlemens, F. P.
dc.contributor.authorBrijs, Bert
dc.contributor.authorvan Dover, R. B.
dc.contributor.authorKornblit, A.
dc.contributor.authorGustafsson, T.
dc.contributor.authorGarfunkel, E.
dc.contributor.authorHillenius, S.
dc.contributor.authorMonroe, D.
dc.contributor.authorKalavade, P.
dc.contributor.authorHergenrother, J. M.
dc.date.accessioned2021-10-15T00:01:42Z
dc.date.available2021-10-15T00:01:42Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7054
dc.source.beginpage88
dc.source.conferenceSymposium on VLSI Technology: Digest of Technical Papers
dc.source.conferencedate11/06/2002
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage9
dc.title

Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing

dc.typeProceedings paper
dspace.entity.typePublication
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