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Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing

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2100 since deposited on 2021-10-15
3last month
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Acq. date: 2026-08-06

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Views

2100 since deposited on 2021-10-15
3last month
2last week
Acq. date: 2026-08-06

Citations