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dc.contributor.authorZhang, W.D.
dc.contributor.authorZhang, J.F.
dc.contributor.authorWood, M.
dc.contributor.authorLalor, M.
dc.contributor.authorBurton, D.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-15T00:12:24Z
dc.date.available2021-10-15T00:12:24Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7097
dc.sourceIIOimport
dc.titleElectron trap generation at different temperatures in the gate oxide
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.conference33rd IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate5/12/2002
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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