Electron trap generation at different temperatures in the gate oxide
dc.contributor.author | Zhang, W.D. | |
dc.contributor.author | Zhang, J.F. | |
dc.contributor.author | Wood, M. | |
dc.contributor.author | Lalor, M. | |
dc.contributor.author | Burton, D. | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Degraeve, Robin | |
dc.date.accessioned | 2021-10-15T00:12:24Z | |
dc.date.available | 2021-10-15T00:12:24Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7097 | |
dc.source | IIOimport | |
dc.title | Electron trap generation at different temperatures in the gate oxide | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.source.peerreview | no | |
dc.source.conference | 33rd IEEE Semiconductor Interface Specialists Conference - SISC | |
dc.source.conferencedate | 5/12/2002 | |
dc.source.conferencelocation | San Diego, CA USA | |
imec.availability | Published - imec |
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