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Characterization of tunnel oxides for non-volatile memory (NVM) applications

dc.contributor.authorAckaert, Jan
dc.contributor.authorVermeulen, Tom
dc.contributor.authorLowe, Antony
dc.contributor.authorBoonen, Sylvie
dc.contributor.authorYao, Thierry
dc.contributor.authorPrasad, Jagdish
dc.contributor.authorThomason, Mike
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorHendrickx, Paul
dc.date.accessioned2021-10-15T03:58:33Z
dc.date.available2021-10-15T03:58:33Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7116
dc.sourceIIOimport
dc.titleCharacterization of tunnel oxides for non-volatile memory (NVM) applications
dc.typeProceedings paper
dc.contributor.imecauthorAckaert, Jan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage33
dc.source.endpage34
dc.source.conferenceProceedings International Semiconductor Device Research Symposium
dc.source.conferencedate10/12/2003
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - imec


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