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Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorRichard, Olivier
dc.contributor.authorBrijs, Bert
dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDefranoux, C.
dc.contributor.authorBoher, P.
dc.contributor.authorRochat, N.
dc.contributor.authorWyon, C.
dc.contributor.authorMack, P.
dc.contributor.authorWolstenholme, J.
dc.contributor.authorVitchev, R.
dc.contributor.authorHoussiau, L.
dc.contributor.authorPireaux, J.J.
dc.contributor.authorBergmaier, A.
dc.contributor.authorDollinger, G.
dc.date.accessioned2021-10-15T04:00:40Z
dc.date.available2021-10-15T04:00:40Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7195
dc.sourceIIOimport
dc.titlePhysical characterization of thin HfO2 layers by the combined analysis with complementary techniques
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage223
dc.source.endpage232
dc.source.conferenceAnalytical Techniques for Semiconductor Materials and Processes
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2003-03


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