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High resolution depth profiling of future gate dielectric materials

dc.contributor.authorBergmaier, A.
dc.contributor.authorDollinger, G.
dc.contributor.authorGörgens, L.
dc.contributor.authorNeumaier, P.
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorHoussiau, L.
dc.date.accessioned2021-10-15T04:00:57Z
dc.date.available2021-10-15T04:00:57Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7201
dc.sourceIIOimport
dc.titleHigh resolution depth profiling of future gate dielectric materials
dc.typeOral presentation
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium I: Functional Metal-Oxides-Semiconductor Structures
dc.source.conferencedate10/06/2003
dc.source.conferencelocationStrassbourg France
imec.availabilityPublished - imec


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